New technical paper titled ‘Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction’ from researchers at Ningbo Institute of Materials Technology and Engineering (Chinese Academy of Sciences), Center of Materials Science and Optoelectronics Engineering (University of Chinese Academy of Sciences), Shanghai Institute of Microsystem and Information Technology (Chinese Academy of Sciences), UNSW Australia and Fudan University.
Abstract:
‘Logic gates are fundamental components of integrated circuits, and integration strategies involving multiple logic gates and advanced materials have been developed to meet the development requirements of high-density integrated circuits.
One Transistor Process-in-Memory Device Strategy w/ Multi-Functional Multi-Gate One-transistor (MGT) Design of Multiple Electrodes
